pwaucti, fine. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . 2n147 9 2n148 0 2n148 1 2n148 2 np n silico n transisto r jede c to-3 9 cas e telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 2n147 9 serie s type s ar e silico n np n transistor s manufacture d b y th e epitaxia l plana r process,mounte d i n a hermeticall y seale d meta l cas e designe d fo r switchin g an d amplifie r applications . maximu m rating s (t c =25 c unles s otherwis e noted ) symbo l collector-bas e voltag e vcb o collector-emitte r voltag e vce v co l lector-emitte r voltag e vce o emitter-bas e voltag e veb o co l lecto r curren t 1 c bas e curren t i b powe r dissipatio n p d operatin g an d storag e junctio n temperatur e tj , tst g therma l resistanc e 9j c electrica l characteristic s (tc=25 c unles s otherwis e noted ) 2n147 9 2n148 1 6 0 6 0 4 0 6. 0 1- 5 1. 0 5. 0 -6 5 2n148 0 2n148 2 10 0 10 0 5 5 6. 0 1. 5 1. 0 5- 0 t o -1-20 0 3 5 symbo l icb o icb o ieb o bvce v bvce o vce(sat ) vce(sat ) vbe(on ) hf e hf e tq n tof f co b fa b tes t condition s vcb=30 v v c b=30v , veb^.o v veb-i.sv , 1 c=50m a ic=200ma , ic=200ma , vce=4.0v , vce^.ov , vce =i ?.ov , ic="200ma , ic=200ma , vcb^o v vcb=28v , tc=i50 c ic=0.25m a ib - 10m a 1 b=20m a ic=200m a ic-200m a 1 c- 5 . om a lb1=20ma , lbl=20ma , ic=5-om a lb2-85m a lb2=85m a mi n ma x 1 0 50 0 1 0 6 0 2n1/t8 0 mi n ma x 1 0 50 0 1 0 10 0 5 5 2n148 1 mi n ma x 1 0 50 0 1 0 6 0 uni t v vv v a a w 'c/ w mi n ma x uni t 10 0 5 5 1 0 50 0 1 0 1. 4 3. 0 2 0 6 0 5 0 ty p 1. 2 ty p 1. 6 ty p 15 0 ty p 1. 5 ty p 1. 4 3. 0 2 0 6 0 5 0 ty p 1. 2 ty p 1. 6 ty p 15 0 ty p 1. 5 ty p - 3. 0 3 5 10 0 5 0 ty p 1. 2 ty p 1. 6 ty p 15 0 ty p 1. 5 ty p - 3. 0 3 5 10 0 5 0 ty p 1. 2 ty p 1. 6 ty p 15 0 ty p 1. 5 ty p u a vv v v v mh z n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n famishe d b y n j semiconductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fa r an y error s o r omission s discoveye d i n it s us e n i semi-conductor s encourage s customer s t o verif y rha t jatasheet s ar e curren t befor e placin g orders . !*- _ f downloaded from: http:///
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